EUV light source optical elements
US7193228B2 · kind B2 · utility
22Cited by
103References
74Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2004 |
| Grant date | Mar 20, 2007 |
| Priority date | — |
| Expiry date | Jan 7, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70916
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Apparatus and methods are disclosed for forming plasma generated EUV light source optical elements, e.g., reflectors comprising MLM stacks employing various binary layer materials and capping layer(s) including single and binary capping layers for utilization in plasma generated EUV light source chambers, particularly where the plasma source material is reactive with one or more of the MLM materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.