Method of forming a semiconductor device having a metal layer
US7208424B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2004 |
| Grant date | Apr 24, 2007 |
| Priority date | — |
| Expiry date | Mar 21, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/963
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal layer is formed over a metal oxide, where the metal oxide is formed over a semiconductor substrate. A predetermined critical dimension of the metal layer is determined. A first etch is performed to etch the metal layer down to the metal oxide and form footings at the sidewalls of the metal layer. A second etch to remove the footings to target a predetermined critical dimension, wherein the second etch is selective to the metal oxide. In one embodiment, a conductive layer is formed over the metal layer. The bulk of the conductive layer may be etched leaving a portion in contact with the metal layer. Next, the portion left in contact with the metal layer may be etched using chemistry selective to the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.