Physical vapor deposition plasma reactor with VHF source power applied through the workpiece

US7244344B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Karl M. Brown · Mountain View, US
• John Pipitone · Livermore, US
• Vineet Haresh Mehta · Boston, US
• Ralf Hofmann · Heidenheim, DE
• Wei Wang · Santa Clara, US
• Semyon Sherstinsky · San Francisco, US

Key dates

• Filing date: May 25, 2005
• Grant date: Jul 17, 2007
• Expiry date: May 25, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76844
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas source coupled to the process gas inlet, a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency in a range between about 60 MHz and 81 MHz, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.