Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography
US7247574B2 · kind B2 · utility
32Cited by
14References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 14, 2004 |
| Grant date | Jul 24, 2007 |
| Priority date | — |
| Expiry date | Jan 14, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70441
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.