Flip-chip bonding of light emitting devices
US7259033B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 17, 2004 |
| Grant date | Aug 21, 2007 |
| Priority date | — |
| Expiry date | Mar 18, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
Abstract
Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.