Film formation method and apparatus for semiconductor process
US7273818B2 · kind B2 · utility
4Cited by
2References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 18, 2004 |
| Grant date | Sep 25, 2007 |
| Priority date | — |
| Expiry date | Jun 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a film-formation method for a semiconductor process, a silicon germanium film is formed on a target substrate by CVD in a process field within a reaction container. Then, a silicon coating film is formed to cover the silicon germanium film by CVD in the process field, while increasing temperature of the process field from the first temperature to a second temperature. Then, a silicon film is formed on the coating film by CVD in the process field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.