Top anti-reflective coating composition and method for pattern formation of semiconductor device using the same
US7288364B2 · kind B2 · utility
2Cited by
3References
39Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2005 |
| Grant date | Oct 30, 2007 |
| Priority date | — |
| Expiry date | Sep 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed herein is a top anti-reflective coating composition which comprises a photoacid generator represented by Formula 1 below. Since the top anti-reflective coating composition dissolves a portion of a photoacid generator present at the top of an underlying photosensitizer, particularly, upon formation of a top anti-reflective coating, it can prevent the top from being formed into a thick section. Therefore, the use of the anti-reflective coating composition enables the formation of a vertical pattern on a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.