Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition
US7294580B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2004 |
| Grant date | Nov 13, 2007 |
| Priority date | — |
| Expiry date | Jan 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76829
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.