Method to form ultra high quality silicon-containing compound layers
US7297641B2 · kind B2 · utility
593Cited by
61References
20Claims
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Key dates
| Filing date | Jul 18, 2003 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | Sep 6, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer is then formed by nitriding the silicon layer. By repeating these steps, a silicon nitride layer of a desired thickness is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.