Passivative chemical mechanical polishing composition for copper film planarization
US7300601B2 · kind B2 · utility
30Cited by
11References
79Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2002 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Feb 3, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu2+, in the bulk CMP composition at the copper/CMP composition interface during CMP processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.