Low temperature plasma deposition process for carbon layer deposition

US7312162B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Kartik Ramaswamy · San Jose, US
• Hiroji Hanawa · Sunnyvale, US
• Biagio Gallo · Los Gatos, US
• Kenneth S. Collins · San Jose, US
• Kai Ma · Singapore, SG
• Vijay Parihar · Fremont, US
• Dean Jennings · San Ramon, US
• Abhilash J. Mayur · Salinas, US
• Amir Al-Bayati · San Jose, US
• Andrew Nguyen · San Jose, US

Key dates

• Filing date: May 17, 2005
• Grant date: Dec 25, 2007
• Expiry date: Mar 13, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and coupling RF plasma bias power or bias voltage to the workpiece.