Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber
US7316199B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2002 |
| Grant date | Jan 8, 2008 |
| Priority date | — |
| Expiry date | Sep 2, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magnetic field nearly parallel to the top surface of a support pedestal in the reaction chamber and four sub-magnetic coil sections placed generally coaxially with the main magnetic coil sections to produce a magnetic field of the direction opposite of that of the magnetic field produced with the main magnetic coil sections. In the magnetic field generator, magnetic fields of opposite polarities are superimposed on each other when electric currents of opposite directions are applied to the main and sub-magnetic coil sections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.