Seeded single crystal silicon carbide growth and resulting crystals
US7316747B2 · kind B2 · utility
25Cited by
15References
68Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 12, 2005 |
| Grant date | Jan 8, 2008 |
| Priority date | — |
| Expiry date | Oct 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system and in the absence of a solid silicon carbide source, by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.