Method for removal of metallic residue after plasma etching of a metal layer
US7320942B2 · kind B2 · utility
13Cited by
35References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2002 |
| Grant date | Jan 22, 2008 |
| Priority date | — |
| Expiry date | Nov 1, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for removal of metallic residue from a substrate after a plasma etch process in a semiconductor substrate processing system by cleaning the substrate in a hydrogen fluoride solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.