System and method for providing a buried thin film resistor having end caps defined by a dielectric mask

US7332403B1 · kind B1 · utility

Assignee

• NATIONAL SEMICONDUCTOR CORPORATION · US

Inventors

• Rodney Hill · San Jose, US
• Victor Torres · Clifton Park, US
• William M. Coppock · Arlington, US
• Richard W. Foote · Kennedale, US
• Terry Lines · Mansfield, US
• Tom Bold · Roanoke, US

Key dates

• Filing date: Jul 11, 2005
• Grant date: Feb 19, 2008
• Expiry date: Jul 11, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/47

Abstract

A buried thin film resistor having end caps defined by a dielectric mask is disclosed. A thin film resistor is formed on an integrated circuit substrate. A resistor protect layer is formed over the thin film resistor. A layer of dielectric material is formed over the resistor protect layer. The dielectric material is masked and dry etched to leave a first portion of dielectric material over a first end of the thin film resistor and a second portion of dielectric material over a second end of the thin film resistor. The resistor protect layer is then wet etched using the first and second portions of the dielectric material as a hard mask. Then a second dielectric layer is deposited and vias are etched down to the underlying portions of the resistor protect layer.