Complementary nonvolatile memory device
US7345898B2 · kind B2 · utility
17Cited by
1References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2005 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Aug 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.