Method and apparatus for material deposition in semiconductor fabrication

US7358186B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Yezdi Dordi · Palo Alto, US
• John M. Boyd · Atascadero, US
• William Thie · Mountain View, US
• Bob Maraschin · Cupertino, US
• Fred C. Redeker · Fremont, US
• Joel M. Cook · Flemington, US

Key dates

• Filing date: Dec 12, 2003
• Grant date: Apr 15, 2008
• Expiry date: Aug 24, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/288
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.