Detection of residual liner materials after polishing in damascene process
US7361584B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2004 |
| Grant date | Apr 22, 2008 |
| Priority date | — |
| Expiry date | Sep 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and structure for the detection of residual liner materials after polishing in a damascene processes includes an integrated circuit comprising a substrate; a dielectric layer over the substrate; a marker layer over the dielectric layer; a liner over the marker layer and dielectric layer; and a metal layer over the liner, wherein the marker layer comprises ultraviolet detectable material, which upon excitation by an ultraviolet ray signals an absence of the metal layer and the liner over the marker layer. Moreover, the marker layer comprises a separate layer from the dielectric layer. Additionally, the ultraviolet detectable material comprises fluorescent material or phosphorescent material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.