Two mask photoresist exposure pattern for dense and isolated regions
US7368225B1 · kind B1 · utility
3Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2004 |
| Grant date | May 6, 2008 |
| Priority date | — |
| Expiry date | May 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method of making plurality of features in a first layer. A photoresist layer is formed over the first layer. Dense regions in the photoresist layer are exposed through a first mask under a first set of illumination conditions. Isolated regions in the photoresist layer are exposed through a second mask different from the first mask under a second set of illumination conditions different from the first set of illumination conditions. The exposed photoresist layer is patterned and then the first layer is patterned using the patterned photoresist layer as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.