Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof
US7375008B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2005 |
| Grant date | May 20, 2008 |
| Priority date | — |
| Expiry date | Feb 12, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method of re-forming a useful layer on a donor wafer after taking off a useful layer formed of a material chosen from among semiconductor materials. The donor wafer includes in succession a substrate and a taking-off structure, the taking-off structure includes the taken-off useful layer before taking-off. The method includes a removal of material involving a portion of the donor wafer on the side where the useful layer has been taken off. The material is removed by mechanical means so as to preserve a portion of the taking-off structure to form at least one other useful layer which can be taken off after re-forming, without adding additional material to the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.