Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer

US7383843B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Michael Ravkin · Sunnyvale, US
• Michael G. R. Smith · West Linn, US
• John M. de Larios · Palo Alto, US
• Fritz Redeker · Fremont, US
• Mikhail Korolik · San Jose, US
• Christian DiPietro · Sherwood, US

Key dates

• Filing date: Jun 30, 2004
• Grant date: Jun 10, 2008
• Expiry date: Feb 22, 2026

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S134/902
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.