Method of fabricating metal-insulator-metal (MIM) device with stable data retention

US7384800B1 · kind B1 · utility

Assignee

• Spansion LLC. · US

Inventors

• Steven C. Avanzino · Cupertino, US
• Sameer Haddad · San Jose, US
• An-Chung Chen · Sunnyvale, US
• Yi-Ching Wu · Hengshan, TW
• Suzette K. Pangrle · Cupertino, US
• Jeffrey A. Shields · Sunnyvale, US

Key dates

• Filing date: Dec 5, 2006
• Grant date: Jun 10, 2008
• Expiry date: Dec 5, 2026

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/49002

Abstract

In the method of fabricating a metal-insulator-metal (MIM) device, a first electrode of α-Ta is provided. The Ta of the first electrode is oxidized to form a Ta2O5 layer on the first electrode. A second electrode of β-Ta is provided on the Ta2O5 layer. Such a device exhibits strong data retention, along with resistance to performance degradation under high temperatures.