Method for front end of line fabrication
US7396480B2 · kind B2 · utility
265Cited by
15References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 2005 |
| Grant date | Jul 8, 2008 |
| Priority date | — |
| Expiry date | Jul 18, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surface is then cooled within the chamber and the reactive species are directed to the cooled substrate surface to react with the native oxides thereon and form a film on the substrate surface. The substrate surface is then heated within the chamber to vaporize the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.