Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate
US7407867B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 24, 2006 |
| Grant date | Aug 5, 2008 |
| Priority date | — |
| Expiry date | Jan 10, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor structure that includes at least one useful layer on a substrate. This method includes providing a source substrate with a zone of weakness therein that defines a relatively thick useful layer between the zone of weakness and a front face of the source substrate; bonding the front face of the source substrate to a support substrate and detaching the useful layer from the source substrate at the zone of weakness to transfer the useful layer to the support substrate; implanting atomic species into a free face of the useful layer to a controlled mean implantation depth therein to form a zone of weakness within the useful layer that defines front and rear useful layers, with the rear useful layer contacting the source substrate and the front useful layer containing a greater concentration of defects; bonding a stiffening substrate to the free face of the front useful layer after implantation of the atomic species; and detaching the front useful layer from the rear useful layer along the zone of weakness to form a semiconductor structure comprising the support substrate and the rear useful layer thereon. The structures obtained can be used in the f…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.