Top anti-reflective coating composition, method for forming the pattern of a semiconductor device using the same, and semiconductor device comprising the pattern
US7419760B2 · kind B2 · utility
0Cited by
4References
14Claims
0Family size
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Inventors
Key dates
| Filing date | Jun 22, 2005 |
| Grant date | Sep 2, 2008 |
| Priority date | — |
| Expiry date | Sep 2, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/126
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed herein is a top anti-reflective coating composition comprising a bissulfone compound, as a photoacid generator, represented by Formula 1 below: Since the top anti-reflective coating composition dissolves a portion of a photoacid generator present at the top of an underlying photosensitizer, particularly, upon formation of a top anti-reflective coating, it can prevent the top from being formed into a thick section. Therefore, the use of the anti-reflective coating composition enables the formation of a vertical pattern of a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.