Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing

US7422775B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Kartik Ramaswamy · San Jose, US
• Hiroji Hanawa · Sunnyvale, US
• Biagio Gallo · Los Gatos, US
• Kenneth S. Collins · San Jose, US
• Kai Ma · Singapore, SG
• Vijay Parihar · Fremont, US
• Dean Jennings · San Ramon, US
• Abhilash J. Mayur · Salinas, US
• Amir Al-Bayati · San Jose, US
• Andrew Nguyen · San Jose, US

Key dates

• Filing date: May 17, 2005
• Grant date: Sep 9, 2008
• Expiry date: Feb 4, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H05H1/46
• WIPO field: Chemical engineering
• WIPO sector: Chemistry

Abstract

A method of processing a workpiece includes introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and exposing the workpiece to optical radiation that is at least partially absorbed in the optical absorber layer.