High performance flash memory device capable of high density data storage
US7443732B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2005 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Jan 24, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is provided for programming a nonvolatile memory array including an array of memory cells, where each memory cell including a substrate, a control gate, a charge storage element, a source region and a drain region. The method includes receiving a programming window containing a predetermined number of bits that are to be programmed in the array and determining which of the predetermined number of bits are to be programmed in the memory array. The predetermined number of bits are simultaneously programmed to corresponding memory cells in the array. A programming state of the predetermined number of bits in the array is simultaneously verified.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.