Semiconductor component and method for producing it

US7446373B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Markus Zundel · Egmating, DE
• Rudolf Zelsacher · Klagenfurt, AT
• Franz Hirler · Isen, DE
• Dietmar Kotz · Moosburg, AT
• Hermann Peri · Wernberg, AT
• Armin Willmeroth · Friedberg, DE

Key dates

• Filing date: Sep 10, 2004
• Grant date: Nov 4, 2008
• Expiry date: Aug 30, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A semiconductor component and also a method for producing it are disclosed. In one embodiment, the semiconductor component includes a surface region or a modified doping region is provided alternatively or simultaneously in the edge region of the cell array, in which surface region or modified doping region the doping concentration is lowered and/or in which surface region or modified doping region the conductivity type is formed such that it is opposite to the conductivity type of the actual semiconductor material region, or in which a field plate region is provided.