CVD method for forming silicon nitride film
US7462376B2 · kind B2 · utility
3Cited by
16References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 2004 |
| Grant date | Dec 9, 2008 |
| Priority date | — |
| Expiry date | Jul 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A CVD method for forming a silicon nitride film includes exhausting a process chamber (8) that accommodates a target substrate (W), and supplying a silane family gas (HCD) and ammonia gas (NH3) into the process chamber, thereby forming a silicon nitride film on the target substrate by CVD. Said forming a silicon nitride film on the target substrate alternately includes a first period of performing supply of the silane family gas (HCD) into the process chamber (8), and a second period of stopping supply of the silane family gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.