Dual-side epitaxy processes for production of nitride semiconductor structures

US7470599B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Sandeep Nijhawan · Los Altos, US
• David Eaglesham · Perrysburg, US
• Lori D. Washington · Union City, US
• David P. Bour · Cupertino, US
• Jacob Smith · Santa Clara, US

Key dates

• Filing date: Apr 14, 2006
• Grant date: Dec 30, 2008
• Expiry date: Jan 31, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0254
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods are provided of fabricating a nitride semiconductor structure. A group-III precursor and a nitrogen precursor are flowed into a processing chamber to deposit a first layer over one side of the substrate with a thermal chemical-vapor-deposition process. A second layer is similarly deposited over an opposite side of the substrate using the group-III precursor and the nitrogen precursor. The substrate is cooled after depositing the first and second layers without substantially deforming a shape of the substrate.