Programming scheme for segmented word line MRAM array
US7480172B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 25, 2006 |
| Grant date | Jan 20, 2009 |
| Priority date | — |
| Expiry date | Sep 22, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An MRAM array has a plurality of MRAM devices that are arranged in rows and columns with segmented word lines. A magnetic biasing field is coupled to each of the MRAM devices. The MRAM devices are programmed by providing a bidirectional bit line current to a selected bit line of the plurality of bit lines and a word line current pulse to one word line segment of one row of word line segments by discharging coupled word line segments. The field biasing device may be permanent magnetic layers or write biasing lines in proximity to the fixed magnetic layer of each of the MRAM and has a magnetic orientation equivalent to the magnetic orientation of a word line segment magnetic field generated by the word line current pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.