Conformal nanolaminate dielectric deposition and etch bag gap fill process

US7482247B1 · kind B1 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• George D. Papasouliotis · Fishkill, US
• Raihan M. Tarafdar · San Jose, US
• Ron Rulkins · Milpitas, US
• Dennis M. Hausmann · Lake Oswego, US
• Jeff Tobin · Nashua, US
• Adrianne K. Tipton · Pleasanton, US
• Bunsen B. Nie · Fremont, US
• Wai-Fan Yau · Mountain View, US
• Brian Lu · Fremont, US
• Timothy M. Archer · Lake Oswego, US
• Sasson Somekh · Los Altos Hills, US

Key dates

• Filing date: Sep 19, 2006
• Grant date: Jan 27, 2009
• Expiry date: Feb 16, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0228
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Conformal nanolaminate dielectric deposition and etch back processes that can fill high aspect ratio (typically at least 5:1, for example 6:1), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps with significantly reduced incidence of voids or weak spots involve the use of any suitable confirmal dielectric deposition technique and a dry etch back. The etch back part of the process involves a single step or an integrated multi-step (for example, two-step) procedure including an anisotropic dry etch followed by an isotropic dry etch. The all dry deposition and etch back process in a single tool increases throughput and reduces handling of wafers resulting in more efficient and higher quality nanolaminate dielectric gap fill operations.