Silicon nitride film with stress control
US7488690B2 · kind B2 · utility
9Cited by
10References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2004 |
| Grant date | Feb 10, 2009 |
| Priority date | — |
| Expiry date | Dec 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.