Apparatus for integration of barrier layer and seed layer
US7494908B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2007 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | May 22, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/903
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system for processing a substrate is provided which includes at least one atomic layer deposition (ALD) chamber for depositing a barrier layer containing tantalum and at least one physical vapor deposition (PVD) metal seed chamber for depositing a metal seed layer on the barrier layer. The at least one ALD chamber may be in fluid communication with a first precursor source providing a tantalum-containing compound and a second precursor source. In one example, the tantalum-containing compound is an organometallic tantalum precursor, such as PDMAT. In another example, the second precursor source contains a nitrogen precursor, such as ammonia. The PDMAT may have a chlorine concentration of about 100 ppm or less, preferably, about 30 ppm or less, and more preferably, about 5 ppm or less. In some examples, the PVD metal seed chamber is used to deposit a copper-containing metal seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.