Method and apparatus for controlling etch processes during fabrication of semiconductor devices
US7498106B2 · kind B2 · utility
10Cited by
40References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2005 |
| Grant date | Mar 3, 2009 |
| Priority date | — |
| Expiry date | Feb 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for controlling etch processes during fabrication of semiconductor devices comprises tests and measurements performed on non-product and product substrates to define an N-parameter CD control graph that is used to calculate a process time for trimming a patterned mask to a pre-determined width. An apparatus for performing such a method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.