Method of forming narrowly spaced flash memory contact openings and lithography masks
US7507661B2 · kind B2 · utility
5Cited by
12References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2004 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Mar 25, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/947
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method is provided for creating optical features on a lithography mask for use in patterning a series of openings of an etch mask on a semiconductor device wafer, comprising creating a series of optical features spaced on the lithography mask from one another along a first direction, where the individual optical features have first mask feature dimensions along the first direction that are smaller than a desired first dimension for the openings to be patterned in the etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.