Anna M. Minvielle
14Patents
6h-index
20Co-inventors
62Inventor score
Filing activity: Dec 1, 1997 → Oct 27, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6562639B1 | Utilizing electrical performance data to predict CD variations across stepper field | Electricity | 33 | Expired |
| US5963816A | Method for making shallow trench marks | Electricity | 30 | Expired |
| US6255125A | Method and apparatus for compensating for critical dimension variations in the production of a semiconductor wafer | Electricity | 26 | Expired |
| US6493063B1 | Critical dimension control improvement method for step and scan photolithography | Physics | 8 | Expired |
| US7427457B1 | Methods for designing grating structures for use in situ scatterometry to detect photoresist defects | Physics | 7 | Active |
| US5985498A | Method of characterizing linewidth errors in a scanning lithography system | Physics | 7 | Expired |
| US7507661B2 | Method of forming narrowly spaced flash memory contact openings and lithography masks | Emerging Cross-Sectional Technologies | 5 | Expired |
| US7112489B1 | Negative resist or dry develop process for forming middle of line implant layer | Electricity | 5 | Expired |
| US6900124B1 | Patterning for elliptical Vss contact on flash memory | Electricity | 4 | Expired |
| US7018922B1 | Patterning for elongated VSS contact flash memory | Electricity | 4 | Expired |
| US7538026B1 | Multilayer low reflectivity hard mask and process therefor | Electricity | 3 | Expired |
| US7384725B2 | System and method for fabricating contact holes | Physics | 3 | Expired |
| US8309457B2 | Multilayer low reflectivity hard mask and process therefor | Electricity | 0 | Active |
| US8048797B2 | Multilayer low reflectivity hard mask and process therefor | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.