Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US7514358B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2005 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Sep 21, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28562
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments of the invention provide a method for forming tantalum nitride materials on a substrate by employing an atomic layer deposition (ALD) process. The method includes heating a tantalum precursor within an ampoule to a predetermined temperature to form a tantalum precursor gas and sequentially exposing a substrate to the tantalum precursor gas and a nitrogen precursor to form a tantalum nitride material. Thereafter, a nucleation layer and a bulk layer may be deposited on the substrate. In one example, a radical nitrogen compound may be formed from the nitrogen precursor during a plasma-enhanced ALD process. A nitrogen precursor may include nitrogen or ammonia. In another example, a metal-organic tantalum precursor may be used during the deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.