Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD

US7524750B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Srinivas D. Nemani · Sunnyvale, US
• Young S. Lee · San Jose, US
• Ellie Yieh · San Jose, US
• Anchuan Wang · San Jose, US
• Jason Bloking · Cambridge, US
• Lung-Tien Han · San Jose, US

Key dates

• Filing date: Oct 27, 2006
• Grant date: Apr 28, 2009
• Expiry date: Jul 7, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76224
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.