Multilayer low reflectivity hard mask and process therefor
US7538026B1 · kind B1 · utility
3Cited by
17References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2005 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Mar 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method utilizing a multilayer anti-reflective coating layer structure can achieve low reflectivity at high numerical apertures. The multilayer anti-reflective coating structure can be utilized as a hard mask forming various integrated circuit structures. A multilayer anti-reflective coating structure can be utilized to form gate stacks comprised of polysilicon and a dielectric layer. A photoresist is applied above the multilayer anti-reflective coating which can include silicon oxynitride (SiON) and silicon rich nitride (SiRN).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.