Method of forming low capacitance ESD device and structure therefor
US7538395B2 · kind B2 · utility
23Cited by
11References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2007 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Dec 26, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/983
Abstract
In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.