Trench polysilicon diode

US7544545B2 · kind B2 · utility

Assignee

• Vishay-Siliconix, LLC · US

Inventors

• Qufei Chen · San Jose, US
• Robert Xu · Fremont, US
• Kyle Terrill · Santa Clara, US
• Deva Pattanayak · Saratoga, US

Key dates

• Filing date: Dec 28, 2005
• Grant date: Jun 9, 2009
• Expiry date: Sep 12, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/611

Abstract

Embodiments of the present invention include a method of manufacturing a trench polysilicon diode. The method includes forming a N−(P−) type epitaxial region on a N+(P+) type substrate and forming a trench in the N−(P−) type epitaxial region. The method further includes forming a insulating layer in the trench and filling the trench with polysilicon forming a top surface of the trench. The method further includes forming P+(N+) type doped polysilicon region and N+(P+) type doped polysilicon region in the trench and forming a diode in the trench wherein a portion of the diode is lower than the top surface of the trench.