Stacked-substrate processes for production of nitride semiconductor structures
US7575982B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2006 |
| Grant date | Aug 18, 2009 |
| Priority date | — |
| Expiry date | Jan 24, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods are provided of fabricating compound nitride semiconductor structures. A group-III precursor and a nitrogen precursor are flowed into a processing chamber to deposit a first layer over a surface of a first substrate with a thermal chemical-vapor-deposition process. A second layer is deposited over a surface of a second substrate with the thermal chemical-vapor-deposition process using the first group-III precursor and the first nitrogen precursor. The first and second substrates are different outer substrates of a plurality of stacked substrates disposed within the processing chamber as a stack so that the first and second layers are deposited on opposite sides of the stack. Deposition of the first layer and deposition of the second layer are performed simultaneously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.