Method of fabricating a hybrid substrate
US7575988B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2007 |
| Grant date | Aug 18, 2009 |
| Priority date | — |
| Expiry date | Feb 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/187
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a hybrid substrate by direct bonding of donor and receiver substrates where each substrate has a respective front face and surface, with the front face of the receiver substrate having a semiconductor material near the surface, and the donor substrate including a zone of weakness that defines a layer to be transferred. The method includes preparing the substrate surfaces by exposing the surface of the receiver substrate to a temperature from about 900° C. to about 1200° C. in an inert atmosphere for at least 30 sec; directly bonding together the front faces of the prepared substrates to form a composite substrate; heat treating the composite substrate to increase bonding strength between the front surfaces of the donor and receiver substrates; and transferring the layer from the donor substrate by detaching the remainder of the donor substrate at the zone of weakness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.