One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US7601441B2 · kind B2 · utility
18Cited by
23References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2004 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Dec 23, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A single polytype single crystal silicon carbide wafer is disclosed having a diameter greater than three inches and less than five inches, resistivity greater than 10,000 ohm-cm, a micropipe density less than 200 cm−2, and a combined concentration of shallow level dopants less than 5E16 cm−3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.