Field effect transistors and methods for fabricating the same

US7605045B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Igor Peidous · Fishkill, US
• Patrick Press · Dresden, DE
• Rolf Stephan · Dresden, DE

Key dates

• Filing date: Jul 13, 2006
• Grant date: Oct 20, 2009
• Expiry date: Oct 30, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/601

Abstract

Field effect transistors and methods for fabricating field effect transistors are provided. A method, in accordance with an exemplary embodiment of the invention, comprises forming a polycrystalline silicon gate electrode overlying a silicon substrate. The gate electrode has two parallel sidewalls. Two sidewall spacers are fabricated overlying the silicon substrate. Each of the two sidewall spacers has a sidewall that is adjacent to one of the two parallel sidewalls of the gate electrode. A portion of the gate electrode between the two sidewall spacers is removed.