Apparatus and method for integrated surface treatment and deposition for copper interconnect
US7615486B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2007 |
| Grant date | Nov 10, 2009 |
| Priority date | — |
| Expiry date | May 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76873
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and system for depositing films on a substrate for copper interconnect in an integrated system are provided to enable controlled-ambient transitions within an integrated system to limit exposure of the substrate to uncontrolled ambient conditions. The method includes moving the substrate into a processing chamber having a plurality of proximity heads. Within the processing chamber, barrier layer deposition is performed over a surface of the substrate using one of the plurality of proximity heads functioning to perform barrier layer ALD. In addition, the method includes moving the substrate from the processing chamber, through a transfer module of the integrated systems, into a processing module for performing copper seed layer deposition. Within the processing module for performing copper seed layer deposition, copper seed layer deposition is performed over the surface of the substrate. The processing chamber for performing the barrier layer ALD and the processing module for performing the copper seed layer deposition are parts of the integrated system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.