Method for improving mechanical properties of low dielectric constant materials
US7622400B1 · kind B1 · utility
32Cited by
86References
28Claims
0Family size
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Key dates
| Filing date | May 18, 2004 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Jun 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a dielectric layer having a low dielectric constant and high mechanical strength are provided. The methods involve depositing a sub-layer of the dielectric material on a substrate, followed by treating the sub-layer with a plasma. The process of depositing and plasma treating the sub-layers is repeated until a desired thickness has been reached.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.