Methods for forming nonvolatile memory elements with resistive-switching metal oxides
US7629198B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2007 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Jan 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
Abstract
Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.