Method for reducing microloading in etching high aspect ratio structures
US7629255B2 · kind B2 · utility
6Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2007 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Jun 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching features of different aspect ratios in a conductive layer is provided. The method comprises: depositing over the conductive layer with an aspect ratio dependent deposition; etching features into the conductive layer with an aspect ratio dependent etching of the conductive layer; and repeating the depositing and the etching at least once.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.